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SKM195GB07E3 - IGBT

Datasheet Summary

Features

  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability, self limiting to 6 x Icnom.
  • Fast & soft inverse CAL diodes.
  • Insulated copper baseplate using DBC Technology (Direct Copper Bonding).
  • With integrated gate resistor Typical.

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Datasheet Details

Part number SKM195GB07E3
Manufacturer Semikron
File Size 587.67 KB
Description IGBT
Datasheet download datasheet SKM195GB07E3 Datasheet
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SKM195GB07E3 SEMITRANS® 2 Trench IGBT Modules SKM195GB07E3 Features • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated gate resistor Typical Applications* • AC inverter drives • UPS • Electronic welders • Wind power • Public transport Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ...
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