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SKM200GA123D - IGBT

Key Features

  • MOS input (voltage controlled).
  • N channel, Homogeneous Si.
  • Low inductance case.
  • Very low tail current with low temperature dependence.
  • High short circuit capability, self limiting to 6.
  • Icnom.
  • Latch-up free.
  • Fast & soft inverse CAL diodes8).
  • Isolated copper baseplate using DCB Direct Copper Bonding Technology.
  • Large clearance (13 mm) and creepage distances (20 mm). Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions 1) Values ... 123 D ... 123 D1 Units V V A A V W °C V 1200 1200 200 / 180 400 / 360 ± 20 1380 – 40 . . .+150 (125) 2 500 7) Class F 40/125/56 200 / 130 400 / 360 1450 10 500 FWD 6) 260 / 180 400 / 360 1800 24 200 SEMITRANS® M IGBT Modules SKM 200 GA 123 D*) SKM 200 GB 123 D SKM 200 GB 123 D1 6) SKM 200 GAL 123 D 6) SKM 200 GAR 123 D 6) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C IFM= – ICM Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.