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SKM350MB120SCH17 - SiC MOSFET

Features

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  • Full Silicon Carbide (SiC) power module.
  • High reliability 2nd Generation SiC MOSFETs.
  • Optimized for fast switching and lowest power losses.
  • High humidity robustness (HV-H3TRB proof).
  • External SiC Schottky Barrier Diode embedded.
  • Insulated copper baseplate using DBC technology (Direct Bonded Copper).
  • Improved thermal performances with Aluminium Nitride (AlN) substrate.
  • UL recognized, file no. E63532 Typical.

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Datasheet Details

Part number SKM350MB120SCH17
Manufacturer Semikron
File Size 844.01 KB
Description SiC MOSFET
Datasheet download datasheet SKM350MB120SCH17 Datasheet

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Full PDF Text Transcription

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SKM350MB120SCH17 SEMITRANS® 3 SiC MOSFET Module SKM350MB120SCH17 Features* • Full Silicon Carbide (SiC) power module • High reliability 2nd Generation SiC MOSFETs • Optimized for fast switching and lowest power losses • High humidity robustness (HV-H3TRB proof) • External SiC Schottky Barrier Diode embedded • Insulated copper baseplate using DBC technology (Direct Bonded Copper) • Improved thermal performances with Aluminium Nitride (AlN) substrate • UL recognized, file no. E63532 Typical Applications • High frequency power supplies • AC inverters • Traction APU • EV Chargers • Industrial Test Systems Remarks • Case temperature limited to TC = 125°C max. • Recommended Tjop = -40 ... +150°C • Gate-Source SURGE VOLTAGE (tsurge<300ns), VGS_surge = -10V ...
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