Click to expand full text
SKM450GB33F
SEMITRANS® 20
SKM450GB33F Features
• 3.3 kV F-IGBT • 450A half bridge • Low Vce, Eoff and Rth • High power density • Low inductance module design • T-sensor • Easy paralleling and easy power
scaling • For flexible and compact medium
voltage inverters
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 150 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 2200 V, Ls = 40 nH, RGon = 6.8 Ω, RGoff = 68 Ω, VGE ± 15, Tj = 150 °C, VCES ≤ 3300 Operation
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°,
Tj
Operation
Module
It(RMS)
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Values
3300 760 542 450 900 -20 ... 20
10
-50 ... 150
674 476 450 900 t.b.d. -50 ... 150
1000 -55 ...