SKM600GAE12E4 Description
SKM600GAE12E4 SEMITRANS® 5 IGBT4 Modules Engineering Sample SKM600GAE12E4 Target Data.
SKM600GAE12E4 Key Features
- IGBT4 = 4. generation medium fast trench IGBT
- CAL4F = Soft switching 4. generation CAL-diode
- Enhanced 900A free-wheeling diode
- With integrated gate resistor
- Isolated copper baseplate using DBC
- UL recognized, file no. E63532
- Case temperature limited to Tc = 125°C max
- Remended Top = -40 ... +150°C
- Product reliability results valid for Tj =