SKiiP703GD121-3DUW Description
sin I2t (Diode) Diode, Tj = 150 °C, 10ms Tj , (Tstg) Visol AC, 1min. Tj = 125 °C VF= VEC IF= 450A; Tj = 25 °C Tj = 125 °C VTO Tj = 125 °C rT Tj = 125 °C Thermal characteristics Rthjs per IGBT Rthjs Rthsa3) per diode.
SKiiP703GD121-3DUW Key Features
- SKiiP technology inside
- pressure contact of ceramic
- pressure contact of main
- pressure contact of auxiliary
- increased thermal cycling
- low stray inductance
- homogenous current
- integrated current sensor
- integrated temperature sensor
- high power density 1) Theatsink = 25 °C, unless