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SKiiP703GD121-3DUW - IGBT POWER MODULE

Features

  • SKiiP technology inside - pressure contact of ceramic to heat sink; low thermal impedance - pressure contact of main electric terminals - pressure contact of auxiliary electric terminals - increased thermal cycling capability - low stray inductance - homogenous current distribution.
  • integrated current sensor.
  • integrated temperature sensor.
  • high power density 1) Theatsink = 25 °C, unless otherwise specified 2) CAL = Controlled Axial Lifetime Technology (soft a.

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Datasheet Details

Part number SKiiP703GD121-3DUW
Manufacturer Semikron
File Size 59.41 KB
Description IGBT POWER MODULE
Datasheet download datasheet SKiiP703GD121-3DUW Datasheet
Additional preview pages of the SKiiP703GD121-3DUW datasheet.

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Full PDF Text Transcription

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SKiiP 703GD121-3DUW I. Power section 1 * SKiiP703GB121CT per phase Absolute maximum ratings Symbol Conditions 1) Values IGBT and inverse diode VCES VCC Operating DC link voltage VGES IC IGBT, Theat sink = 25 / 70 °C ICM IGBT, tp < 1 ms,Theat sink = 25°C IF Diode, Theat sink = 25 / 70 °C IFM Diode, tp < 1 ms IFSM Diode, Tj = 150 °C, 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms Tj , (Tstg) Visol AC, 1min. IC-package4) Theat sink = 70°C, Tterm = 115 °C 1200 900 ± 20 700 / 525 1400 525 / 393,75 900 4320 93 -40...
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