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SKiiP703GD121-3DUW Datasheet IGBT POWER MODULE

Manufacturer: Semikron Danfoss

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Overview

SKiiP 703GD121-3DUW I.

Power section 1 * SKiiP703GB121CT per phase Absolute maximum ratings Symbol Conditions 1) Values IGBT and inverse diode VCES VCC Operating DC link voltage VGES IC IGBT, Theat sink = 25 / 70 °C ICM IGBT, tp < 1 ms,Theat sink = 25°C IF Diode, Theat sink = 25 / 70 °C IFM Diode, tp < 1 ms IFSM Diode, Tj = 150 °C, 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms Tj , (Tstg) Visol AC, 1min.

IC-package4) Theat sink = 70°C, Tterm = 115 °C 1200 900 ± 20 700 / 525 1400 525 / 393,75 900 4320 93 -40...+150 (125) 3000 1 * 500 Units V V V A A A A A kA2s °C V A Characteristics Symbol Conditions 1) IGBT V(BR)CES gate driver without supply ICES VGE = 0, VCE = VCES VCEO 7) rT 7) VCEsat 7) VCEsat 7) Tj = 125 °C Tj = 125 °C IC = 490A, IC = 490A, Eon + Eoff5) IC=490A, Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 125 °C Tj = 25 °C VCC=600V VCC=900V C per SKiiP, AC side LCE top, bottom RCC´-EE´ resistance, terminal-chip Inverse diode 2) VF = VEC IF= 450A; Tj = 125 °C VF= VEC IF= 450A; Eon + Eoff5) IF= 450A; Tj = 25 °C Tj = 125 °C VTO Tj = 125 °C rT Tj = 125 °C Thermal characteristics Rthjs per IGBT Rthjs Rthsa3) per diode L: P16 heat sink; 280 m3/ h W: WK 40; 8l/min; 50% glycol Current sensor Ip RMS Ta=100° C , Vsupply = ± 15V Ipmax RMS t ≤ 2 s Linearity Vsupply ≥ ±14,25V, 0≤I≤ ± 700A, per sensor Ippeak t ≤ 10 µs, per sensor Mechanical data M1 DC terminals, SI Units M2 AC terminals, SI Units M3 to heat sink 6) min.

Key Features

  • SKiiP technology inside - pressure contact of ceramic to heat sink; low thermal impedance - pressure contact of main electric terminals - pressure contact of auxiliary electric terminals - increased thermal cycling capability - low stray inductance - homogenous current distribution.
  • integrated current sensor.
  • integrated temperature sensor.
  • high power density 1) Theatsink = 25 °C, unless otherwise specified 2) CAL = Controlled Axial Lifetime Technology (soft a.

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