• Part: PE4435A
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Semione
  • Size: 596.82 KB
Download PE4435A Datasheet PDF
Semione
PE4435A
Description The PE4435A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = -30V, ID = -10.5A RDS(ON) < 20mΩ @ VGS=-10V RDS(ON) < 35mΩ @ VGS=-4.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - PWM applications - Load switch - Power management Schematic diagram Marking and pin assignment Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Pulsed Drain Current (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Thermal Characteristic Thermal Resistance, Junction-to-Ambient (Note 2) RθJA SOP-8 Rating -30 ±20 -10.5 -32 3.1 -55 To 150 Unit V V A A W ℃ ℃/W .semi-one. Page 1 2020 Sept. v1.0 Electrical Characteristics (TA=25℃ unless otherwise...