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PE4435A - P-Channel Enhancement Mode Power MOSFET

General Description

The PE4435A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = -30V, ID = -10.5A RDS(ON) < 20mΩ @ VGS=-10V RDS(ON) < 35mΩ @ VGS=-4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PE4435A
Manufacturer Semione
File Size 596.82 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE4435A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET Description The PE4435A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = -30V, ID = -10.5A RDS(ON) < 20mΩ @ VGS=-10V RDS(ON) < 35mΩ @ VGS=-4.