PE6050K - N-Channel Enhancement Mode Power MOSFET

Semione

General Description

The PE6050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =60V, ID=50A RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 22mΩ @ VGS=4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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PE6050K n-channel enhancement mode power mosfet by Semione - Datasheet Preview

Datasheet Details

Part number	PE6050K
Manufacturer	Semione
File Size	583.20 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE6050K Datasheet

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N-Channel Enhancement Mode Power MOSFET Description The PE6050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. PE6050K General Features ● VDS =60V, ID=50A RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 22mΩ @ VGS=4.