PE7340G - P-Channel Enhancement Mode Power MOSFET

Semione

General Description

The PE7340G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS = -30V, ID = -50A RDS(ON) < 11mΩ @ VGS=-10V RDS(ON) < 17mΩ @ VGS=-4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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PE7340G p-channel enhancement mode power mosfet by Semione - Datasheet Preview

Datasheet Details

Part number	PE7340G
Manufacturer	Semione
File Size	1.20 MB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	PE7340G Datasheet

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P-Channel Enhancement Mode Power MOSFET Description The PE7340G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = -30V, ID = -50A RDS(ON) < 11mΩ @ VGS=-10V RDS(ON) < 17mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch ● Power management PE7340G Schematic diagram Marking and pin assignment Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current (Note 1) Single Pulsed Avalanche Energy(L=0.