• Part: PE8425DM
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Semione
  • Size: 1.07 MB
Download PE8425DM Datasheet PDF
Semione
PE8425DM
Description The PE8425DM uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 40V, ID = 25A RDS(ON) < 16mΩ @ VGS=10V RDS(ON) < 25mΩ @ VGS=4.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - PWM applications - Load switch - Power management Schematic diagram Marking and pin assignment PDFN3.3x3.3-8L Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Avalanche Current Avalanche Energy (L=0.1m H) Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID IDM PD IAS EAS TJ,TSTG Thermal Characteristic Thermal Resistance, Junction-to-Case (Note 2) RθJC Rating 40 ±20 25 17 100 17 33 54 -55 To 150 Unit V V A A A W A m J...