• Part: PES025N08R
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Semione
  • Size: 423.49 KB
Download PES025N08R Datasheet PDF
Semione
PES025N08R
Description The PES025N08R uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 90V, ID = 300A RDS(ON) < 2.2mΩ @ VGS=10V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - Synchronous rectification - Battery management - UPS (Uninterruptible Power Supply) Schematic diagram Marking and pin assignment Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Single Pulsed Avalanche Energy (L=0.1m H) Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID(TC=100℃) IDM PD EAS TJ,TSTG Thermal Characteristic Thermal Resistance, Junction-to-Case RθJC TOLL Rating 90 ±20 300 210 1200 326 845 -55 To 175 Unit V V A A A W m J...