PES025N08R - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PES025N08R uses deep trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 90V, ID = 300A RDS(ON) < 2.2mΩ @ VGS=10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

Semione

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Datasheet Details

Part number	PES025N08R
Manufacturer	Semione
File Size	423.49 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PES025N08R Datasheet
Additional preview pages of the PES025N08R datasheet.

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N-Channel Enhancement Mode Power MOSFET Description The PES025N08R uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 90V, ID = 300A RDS(ON) < 2.2mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Synchronous rectification ● Battery management ● UPS (Uninterruptible Power Supply) PES025N08R Schematic diagram Marking and pin assignment Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Single Pulsed Avalanche Energy (L=0.

Published: Nov 5, 2025 |