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PES025N08R - N-Channel Enhancement Mode Power MOSFET

General Description

The PES025N08R uses deep trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 90V, ID = 300A RDS(ON) < 2.2mΩ @ VGS=10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PES025N08R
Manufacturer Semione
File Size 423.49 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PES025N08R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The PES025N08R uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 90V, ID = 300A RDS(ON) < 2.2mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Synchronous rectification ● Battery management ● UPS (Uninterruptible Power Supply) PES025N08R Schematic diagram Marking and pin assignment Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Single Pulsed Avalanche Energy (L=0.