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1N5806US - Superfast Recovery Diodes Surface Mount

General Description

Quick reference data VR 50 -150 V IF 1N5802US to 1N5806US = 2.5A trr 1N5802US to 1N5806US = 25nS IR 1N5802US to 1N5806US = 1µA

Key Features

  • ‹ ‹ ‹ ‹ Very low reverse recovery time Hermetically sealed non-cavity construction Soft, non-snap, off recovery characteristics Very low forward voltage drop These products are qualified to MIL-PRF-19500/477 and are preferred parts as listed in MIL-HDBK-5961. They can be supplied fully released as JANTX and JANTXV versions. Electrical Specifications Electrical specifications @ TA = 25°C unless otherwise specified. Symbol Working Reverse Voltage Repetitive Reverse Voltage Average Forward Curre.

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Datasheet Details

Part number 1N5806US
Manufacturer SEMTECH
File Size 140.25 KB
Description Superfast Recovery Diodes Surface Mount
Datasheet download datasheet 1N5806US Datasheet

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1N5802US Superfast Recovery Diodes Surface Mount
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1N5802US/1N5804US/1N5806US www.DataSheet4U.com Superfast Recovery Diodes Surface Mount (US) POWER DISCRETES Description Quick reference data VR 50 -150 V IF 1N5802US to 1N5806US = 2.5A trr 1N5802US to 1N5806US = 25nS IR 1N5802US to 1N5806US = 1µA Features ‹ ‹ ‹ ‹ Very low reverse recovery time Hermetically sealed non-cavity construction Soft, non-snap, off recovery characteristics Very low forward voltage drop These products are qualified to MIL-PRF-19500/477 and are preferred parts as listed in MIL-HDBK-5961. They can be supplied fully released as JANTX and JANTXV versions. Electrical Specifications Electrical specifications @ TA = 25°C unless otherwise specified. Symbol Working Reverse Voltage Repetitive Reverse Voltage Average Forward Current (@ 75°C lead length = 0.