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1N5553US - Standard Recovery Rectifier Diode

This page provides the datasheet information for the 1N5553US, a member of the 1N5550US Standard Recovery Rectifier Diode family.

Datasheet Summary

Description

Quick reference data VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V

Features

  • Low reverse leakage current Hermetically sealed in fused metal oxide Good thermal shock resistance Low forward voltage drop Avalanche capability These products are qualified to MIL-PRF-19500/420. They can be supplied fully released as JAN, JANTX, and JANTXV versions. Absolute Maximum Ratings Electrical specifications @ TA = 25°C unless otherwise specified. Symbol Working Reverse Voltage Average Forward Current @ 55 °C in free air, lead length 0.375" Repetitive Surge Current @ 55 °C in free air.

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Datasheet Details

Part number 1N5553US
Manufacturer Semtech
File Size 183.34 KB
Description Standard Recovery Rectifier Diode
Datasheet download datasheet 1N5553US Datasheet
Additional preview pages of the 1N5553US datasheet.

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Full PDF Text Transcription

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1N5550US THRU 1N5554US Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode POWER DISCRETES Description Quick reference data VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V Features Low reverse leakage current Hermetically sealed in fused metal oxide Good thermal shock resistance Low forward voltage drop Avalanche capability These products are qualified to MIL-PRF-19500/420. They can be supplied fully released as JAN, JANTX, and JANTXV versions. Absolute Maximum Ratings Electrical specifications @ TA = 25°C unless otherwise specified. Symbol Working Reverse Voltage Average Forward Current @ 55 °C in free air, lead length 0.375" Repetitive Surge Current @ 55 °C in free air, lead length 0.375" Non-Repetitive Surge Current (tp = 8.3mS @ VR & TJMAX) (tp = 8.
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