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SMC2351SN - Single P-Channel MOSFET

General Description

SMC2351SN is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced trench technology devices are well suited for high efficiency fast switching applications.

a : Company name.

Key Features

  • VDS=-20V, ID=-4.2A RDS(ON)=35mΩ(Typ. )@VGS=-10V RDS(ON)=43mΩ(Typ. )@VGS=-4.5V RDS(ON)=57mΩ(Typ. )@VGS=-2.5V RDS(ON)=80mΩ(Typ. )@VGS=-1.8V.
  • Fast switch.
  • 1.8V Low gate drive.

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Datasheet Details

Part number SMC2351SN
Manufacturer Semtron
File Size 291.32 KB
Description Single P-Channel MOSFET
Datasheet download datasheet SMC2351SN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMC2351SN Single P-Channel MOSFET ■DESCRIPTION SMC2351SN is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications. ■PART NUMBER INFORMATION SMC 2351 SN - TR G a b c de a : Company name. b : Product Serial number. c : Package code SN: SOT-23 d : Handling code TR: Tape&Reel e : Green produce code G: RoHS Compliant ■FEATURES VDS=-20V, ID=-4.2A RDS(ON)=35mΩ(Typ.)@VGS=-10V RDS(ON)=43mΩ(Typ.)@VGS=-4.5V RDS(ON)=57mΩ(Typ.)@VGS=-2.5V RDS(ON)=80mΩ(Typ.)@VGS=-1.8V ◆Fast switch ◆1.