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SMC4270S6 - Common-Drain Dual N-Channel MOSFET

General Description

SMC4270 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced trench technology to provide excellent RDS(ON).

Key Features

  • VDS = 20V, ID = 6.7A RDS(ON) =16mΩ(Typ. )@VGS = 4.5V RDS(ON) =17mΩ(Typ. )@VGS = 4.0V RDS(ON) =18mΩ(Typ. )@VGS = 3.2V RDS(ON) =20mΩ(Typ. )@VGS = 2.5V RDS(ON) =24mΩ(Typ. )@VGS = 1.8V.
  • Fast switch.
  • High power and current handling capability.
  • Exceptional on-resistance.

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Datasheet Details

Part number SMC4270S6
Manufacturer Semtron
File Size 326.63 KB
Description Common-Drain Dual N-Channel MOSFET
Datasheet download datasheet SMC4270S6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMC4270S6 Common-Drain Dual N-Channel MOSFET ■DESCRIPTION SMC4270 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology to provide excellent RDS(ON). These devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package. ■PART NUMBER INFORMATION SMC 4270 S6 - TR G a b c de a : Company name. b : Product Serial number. c : Package code S6:SOT-23-6L d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant ■FEATURES VDS = 20V, ID = 6.7A RDS(ON) =16mΩ(Typ.)@VGS = 4.5V RDS(ON) =17mΩ(Typ.)@VGS = 4.0V RDS(ON) =18mΩ(Typ.)@VGS = 3.2V RDS(ON) =20mΩ(Typ.)@VGS = 2.5V RDS(ON) =24mΩ(Typ.)@VGS = 1.