STC5853 Datasheet | Semtron

P-Channel Enhancement Mode MOSFET with Schottky Diode P-Channel Enhancement Mode MOSFET with Schottky Diode - DESCRIPTION The STC5853 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in a very small outline surface mount package. - FEATURE MOSFET - -20V/-3.5A, RDS(ON) =70mΩ@VGS =-4.5V - -20V/-2.4A, RDS(ON) =95mΩ@VGS =-2.5V - -20V/-1.8A, RDS(ON) =125mΩ@VGS =-1.8V SCHOTTKY - VKA = 20V, VF=0.43V(Typ.)@ IF = 1A - Full Ro HS pliance - DFN3X2-8L package design - APPLICATIONS - Battery Powered System - Notebook Power Management - Cell Phone - PIN CONFIGURATION PIN1 A A SG KKDD TOP VIEW DFN3X2-8L S P-Channel Mosfet A Schottky Diode - PART NUMBER INFORMATION STC5853XX-XX X Lead Plating Code Handling Code Package Code Lead Plating Code G : Lead-free product. This product is Ro HS pliant Handling Code TR : Tape&Reel Package Code DF :...