STC5853 - P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The STC5853 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.

advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

Semtron

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Datasheet Details

Part number	STC5853
Manufacturer	Semtron
File Size	298.11 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	STC5853 Datasheet
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P-Channel Enhancement Mode MOSFET with Schottky Diode STC5853 P-Channel Enhancement Mode MOSFET with Schottky Diode ■DESCRIPTION The STC5853 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in a very small outline surface mount package. ■FEATURE MOSFET  -20V/-3.5A, RDS(ON) =70mΩ@VGS =-4.5V  -20V/-2.4A, RDS(ON) =95mΩ@VGS =-2.5V  -20V/-1.8A, RDS(ON) =125mΩ@VGS =-1.8V SCHOTTKY  VKA = 20V, VF=0.43V(Typ.

Published: Aug 14, 2016 |