STN2306 - N-Channel Enhancement Mode MOSFET

Semtron

General Description

The STN2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.

advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

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STN2306 n-channel enhancement mode mosfet by Semtron - Datasheet Preview

Datasheet Details

Part number	STN2306
Manufacturer	Semtron
File Size	149.05 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	STN2306 Datasheet

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N-Channel Enhancement Mode MOSFET STN2306 30V N-Channel Enhancement Mode MOSFET ■DESCRIPTION ■FEATURE The STN2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in a very small outline surface mount package. 30V/3.6A, RDS(ON)= 45mΩ(typ.)@VGS= 10V 30V/2.8A, RDS(ON)= 55mΩ(typ.)@VGS= 4.