Semtron STN2306
The STN2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in a very small outline surface mount package.| Part No. | STN2306 |
|---|---|
| Datasheet | STN2306 Download |
| Manufacturer |  Semtron |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURE advanced trench technology to provide excellent RDS(ON). 30V/3.6A, RDS(ON)= 45mΩ(typ.)@VGS= 10V 30V/2.8A, RDS(ON)= 55mΩ(typ.)@VGS= 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability This is a Green compliance SOT-23L package design●
APPLICATIONS
Power Management in Note book Portable Equipment DSC LCD Display inverter Battery Powered System DC/DC Converter●PIN CONFIGURATION Gate Source Drain TOP VIEW SOT-23L D G S N-Channel
●PART NUMBER INFORMATION STN2306X- XX X Lead Plating Code Handling Code Package Code Lead Plating Code G : Lead-free product. This product is Green compliant Handling Code TR : Tape&Reel Package Code S : SOT-23L STN2306 Rev.1.1 Copyright © Semtron Microtech Corp. 1
●ORDERING INFORMATION Part Number Package Code Package STN2306S-TRG S SOT-23L ※ SOT-23L : Only available in tape and reel packaging. (A reel contains 3000 devices) ※ G : Lead-free product. This product is Green compliant.
