DESCRIPTION
: 200 VOLT, 0.105 OHM, 27.4 A MOSFET IN A HERMETIC TO-254 PACKAGE. (add suffix S for up-screening to JTX Level – 2N7225S) MAXIMUM RATINGS
RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED. SYMBOL VGS ID IDM TOP/TSTG RθJC PD MIN. -55 TYP. MAX. ±20 27.4 17 110 150 0.83 150 UNITS Volts Amps Amps °C °C/W Watts VGS=10V, TC = 25°C VGS=10V, TC = 100°C PULSED DRAIN CURRENT @ T C = 25°C OPERATING AND STORAGE TEMPERATURE TERMAL RESISTANCE JUNCTION TO CASE TOTAL DEVICE DISSIPATION @ TC = 25°C ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 1.0mA DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 17A VGS = 10V, ID = 27.4A GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250μA FORWARD TRANSCONDUCTANCE VDS ≥ 15V, IDS = 17A ZERO GATE VOLTAGE DRAIN CURRENT VDS = 0.8xMax. Rating, VGS = 0V VDS = 0.8xMax. Rating VGS = 0V, TJ = 125°C GATE TO SOURCE LEAKAGE FORWARD @ RATED GATE TO SOURCE LEAKAGE REVERSE VGS TOTAL GAT...
Sensitron
