Datasheet Summary
SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 1138, REV. D
HV MOSFET Power Module Data Sheet
DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL
V (BR)DSS IDSS
(AT Tj=250C UNLESS OTHERWISE SPECIFIED)
CONDITION
V GS =0V,ID=0.5 mA, Tj = 25 oC V GS =0V, V DS=1000V, Tj = 25 oC V DS=1000V, Tj = 125 oC V GS =10V TC = 25 oC V DS = V GS ID = 0.50mA V GS = 10 V, ID = 0.80 A V DS = 25 V, V GS = 0 V, f = 1 MHz V GS = 10 V, ID = 1 A, V DD = 400 V V DD = 500 V, V GS = 10 V, ID = 1.0 A
MI N
UNIT
POWER MOSFETS Q1,…,6
Drain-to-Source Breakdown Voltage for each one of Q1,2,…,6 Drain-to-Source Leakage Current 1000 0.250 2 1...