Datasheet Summary
SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATASHEET 1137, REV.D
HV IGBT Solid-State Switch Data Sheet
DESCRIPTION: 12000 VOLT, 1.0 AMP, INDUSTRIAL IGBT Solid-state Switch ELECTRICAL CHARACTERISTICS
PARAMETER
Collector-to-Emitter Breakdown Voltage for each one of Q1,2,3,4 Collector-to-Emitter Leakage Current
(AT Tj=250C UNLESS OTHERWISE SPECIFIED)
CONDITION
V GE =0V,IC=0.5 mA, Tj = 25 oC V GE =0V, V CE=2500V, Tj = 25 oC V CE=2000V, Tj = 125 oC(1) V GE =10V TC = 25 oC V CE = V GE IC = 1mA V CE = 25 V V GE = 15 V, IC = 2.0 A
SYMBOL
V (BR)CES ICES
MI N
2900(1)
- TYP
- MAX
0.5 2 1 (2) 100 7.5 0.8 1.0 19.0 12.5 100 100 10000
UNIT
V mA A A V nF V o
Continuous Collector Current...