SCP-4979 Overview
Description
12000 VOLT, 1.0 AMP, INDUSTRIAL IGBT Solid-state Switch PARAMETER Collector-to-Emitter Breakdown Voltage for each one of Q1,2,3,4 Collector-to-Emitter Leakage Current (AT Tj=250C UNLESS OTHERWISE SPECIFIED) CONDITION V GE =0V,IC=0.5 mA, Tj = 25 oC V GE =0V, V CE=2500V, Tj = 25 oC V CE=2000V, Tj = 125 oC(1) V GE =10V TC = 25 oC V CE = V GE IC = 1mA V CE = 25 V V GE = 15 V, IC = 2.0 A SYMBOL V (BR)CES ICES MI N 2900(1) - TYP - MAX 0.5 2 1 (2) 100 7.5 0.8 1.0 19.0 12.5 100 100 10000 UNIT V mA A A V nF V o Continuous Collector Current Maximum Pulsed Collector Current, 5ยต sec Gate-Source Threshold Voltage Gate Input Capacitance Collector-to-Emitter Saturation Voltage for each one of Q1,2,3,4 Junction to Base IC ICM V GS(th) CiSS V CEsat Rthjc VZ Vz Tj Tj V iso 5.0 - 12.5 17.5 11.0 -40 -40 1 minute, at sea level 18.5 11.5 C/W V V o C o C V HV TVS CHARACTERISTICS PARAMETER BD Voltage Clamping Voltage SYMBOL V BD V CE(CL) CONDITION IC = 0.50 mA IC = 2 mA MIN 2500 2600 TYP 2600 2700 MAX 2700 2900 UNIT V V Notes, 1- Guaranteed by design. To be tested at room temperature only.
