Datasheet4U Logo Datasheet4U.com

SCP-5115 - Hermetic Half Bridge IGBT Module

Datasheet Summary

Features

  • Hermetic Core Construction.
  • Increased Creepage and Clearance Distances for High Altitude operation.
  • Built-in RTD for accurate Temperature sense.
  • High Frequency Switching.
  • Operation at Temperature Extremes.
  • Internal Layout with Minimized Stray Inductances Maximum Ratings Symbol Vces Ic Icpulse VGE Hipot Tj Diode IF IFM All ratings are at TA = 25oC unless otherwise specified. Test Conditions Value 600 800 / 500 1400 / 800 + / - 20 -55 to 150.

📥 Download Datasheet

Datasheet preview – SCP-5115

Datasheet Details

Part number SCP-5115
Manufacturer Sensitron
File Size 79.45 KB
Description Hermetic Half Bridge IGBT Module
Datasheet download datasheet SCP-5115 Datasheet
Additional preview pages of the SCP-5115 datasheet.

📁 Similar Datasheet

  • SCP10C60 - Silicon Controlled Rectifiers (Semiwell)
  • SCP12C60 - Silicon Controlled Rectifiers (Semiwell)
  • SCP20C60 - Silicon Controlled Rectifiers (SemiWell Semiconductor)
  • SCP2120S - 2A 1200V SiC Schottky Barrier Diode (Sunnychip)
  • SCP25C60 - Silicon Controlled Rectifiers (Semiwell)
  • SCP35N03J-C - N-Channel Enhancement Mode Power MOSFET (SeCoS)
  • SCP40N03S-C - N-Channel MOSFET (SeCoS)
  • SCP51460 - High Accuracy Low Noise 20mA LDO Regulator (ON Semiconductor)
  • SCP60N03S-C - N-Channel MOSFET (SeCoS)
  • SCP6C60 - SILICON CONTROLLED RECTIFIERS (Semiwell)
Other Datasheets by Sensitron
  • SCP-5144 - 3-Phase Bridge IGBT Module
  • SCP-5282-3 - High Pulse Power Mil-STD-1275 Transorb
  • SCP-5282-9 - High Pulse Power Mil-STD-1275 SuperClamp
  • SCP-5285 - AC SOLID STATE RELAY
  • SCP-5758 - HYPERABRUPT VARACTOR DIODE
  • SCP-5759 - LOW CAPACITANCE HYPERABRUPT VARACTOR DIODE
  • SCP-5760 - GaAs CONSTANT GAMMA HYPERABRUPT VARACTOR DIODE
  • SCP-5761 - GaAs CONSTANT GAMMA HYPERABRUPT VARACTOR DIODE

Full PDF Text Transcription

Click to expand full text
SENSITRON SEMICONDUCTOR TECHNICAL DATA PART NUMBER: SCP-5115, REV. - SCP-5115 Hermetic Half Bridge -- IGBT Module 600V, 800A Features: • Hermetic Core Construction • Increased Creepage and Clearance Distances for High Altitude operation • Built-in RTD for accurate Temperature sense • High Frequency Switching • Operation at Temperature Extremes • Internal Layout with Minimized Stray Inductances Maximum Ratings Symbol Vces Ic Icpulse VGE Hipot Tj Diode IF IFM All ratings are at TA = 25oC unless otherwise specified. Test Conditions Value 600 800 / 500 1400 / 800 + / - 20 -55 to 150 Units Vge = 0V Tc = 25C / 70C Tj = 25C / 125C, 10kHz, D=.05 1500Vrms, 50Hz / 60Hz, 1 min. V A A V °C Tc = 25C / 70C Tj = 25C / 125C, 10kHz, D=.
Published: |