SSC-HB601 Datasheet | Seoul Semiconductor

Features 2. Absolute maximum ratings 3. Electro-optical characteristics 4. Characteristic diagram 5. Soldering profile 6. Outline dimension 7. Packing 8. Reel packing structure 9. Label Structure 10. Precaution for use 11. Ranks Customer Approved by Approved by Approved by Supplier Drawn by Checked by Approved by SSC-QP-0401-06(REV.1) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 SSC-HB601 Seoul Semiconductor - 1/9 - 1. Features Package : 2.1×1.0×0.6 mm Untinted, Diffused flat mold Wavelength : 470 nm 2. Absolute Maximum Ratings Parameter Power Dissipation Symbol Pd IF IFM- 1 VR Topr Tstg Value 72 20 60 5 -30 ~ +85 -40 ~ +100 (Ta=25℃) Unit m W m A m A V ℃ ℃ .. Forward Current Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature - 1 IFM conditions : Pulse width Tw ≤ 0.1msec. Duty ratio ≤ 1/10 IFM applies for the condition : Tw ≤ 0.1msec and Duty cycle ≤ 1/10 3. Electro-Optical Characteristics Parameter Forward Voltage Reverse Current Luminous Intensity- 2 Wavelength Spectral Bandwidth Viewing angle- 3 Symbol VF IR IV λ Δλ 2θ 1/2 (Ta=25℃) Condition IF=5m A VR=5V IF=5m A IF=5m A IF=5m A IF=5m A Min 2.7 14 465 Typ 2.9 24 470 30 150 Max 3.1 10 40 475 Unit V ㎂ mcd nm nm ˚ - 2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. - 3 θ 1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity. Note] All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at 5m A, 20m A within the maximum ratings shown above. All measurements were made under the standardized environment of SSC. (Tolerance: VF ±0.1V, IV ±10%, λd ±2nm) SSC-QP-0401-06(REV.1) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 - 2/9 - 4. Characteristic Diagram Forward...