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3DD101 - NPN Silicon Low Frequency High Power Transistor

Download the 3DD101 datasheet PDF. This datasheet also covers the 3DD100 variant, as both devices belong to the same npn silicon low frequency high power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 1. Using triple-diffusion process. Excellent capacity in anti-burnout. Excellent second breakdown capacity. 2. Good temperature stability. Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 for all, QZJ840611A, QZJ840611 for 3DD100 and 3DD101. 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP for all, JT, JCT, GS, G, G+ for 3DD100 and 3DD101.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (3DD100-ShaanxiQunliElectric.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 3DD101
Manufacturer Shaanxi Qunli Electric
File Size 30.43 KB
Description NPN Silicon Low Frequency High Power Transistor
Datasheet download datasheet 3DD101 Datasheet

📁 Similar Datasheet

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Other Datasheets by Shaanxi Qunli Electric

Part Number Description
3DD10 NPN Silicon Low Frequency High Power Transistor
3DD100 NPN Silicon Low Frequency High Power Transistor
3DD102 NPN Silicon Low Frequency High Power Transistor
3DD11 NPN Silicon Low Frequency High Power Transistor
3DD57 NPN Silicon Low Frequency High Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 for all, QZJ840611A, QZJ840611 for 3DD100 and 3DD101. 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP for all, JT, JCT, GS, G, G+ for 3DD100 and 3DD101. TECHNICAL DATA: Parameter name Symbols Unit Collector-Emitter Voltage VCEO V Collector-Emitter Breakdown Voltage V(BR)CEO V Emitter-Base Voltage Max. Collector Current VEBO ICM V A Max.