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9018 - Silicon NPN Transistor

Download the 9018 datasheet PDF. This datasheet also covers the 9018_ShanghaiSIM variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

:The 9018 is designed for UHF general amplifier applications

Key Features

  • Excellent hFE Linearity.
  • Excellent fT characteristic Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 360um×360um 210±20um φ65um φ65um AlSiCu Au (As) 50um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symbo.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (9018_ShanghaiSIM-BCDSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 9018
Manufacturer Shanghai SIM-BCD Semiconductor
File Size 150.45 KB
Description Silicon NPN Transistor
Datasheet download datasheet 9018 Datasheet

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Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
9018 9018 Silicon NPN Epitaxial Transistor Description :The 9018 is designed for UHF general amplifier applications Features: ●Excellent hFE Linearity ●Excellent fT characteristic Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 360um×360um 210±20um φ65um φ65um AlSiCu Au (As) 50um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symbol ICBO IEBO BVCBO BVCEO BVEBO hFE VCE(sat) Test Condition VCB=20V, IE=0 VEB=3V, IC=0 IC=0.1mA IC=1mA IE=0.1mA VCE=5V, IC=1mA IC=10mA,IB=1mA 30 20 5 60 200 0.3 V Min Max 0.1 0.