HC8050
Shantou Huashan Electronic Devices Co.,Ltd.
- NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION.
- ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
T stg
- - Storage Temperature ………………………… -55~150 ℃ Tj-
- Juncttion Temperature …………………………………150℃ P C
- - Collector Dissipation ………………………………… 1W VCBO-
- Collector-Base Voltage ………………………………40V VCEO-
- Collector-Emitter Voltage……………………………25V V EB O
- - Emitter-Base Voltage ……………………………… 6V I C
- - Collector Current ……………………………………… 1.5A 1―Emitter，E 2―Collector， C 3―Base，B TO-92
- ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base- Emitter Voltage Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Current Gain-Bandwidth Product Min Typ Max Unit Test Conditions
ICBO IEBO HFE VBE VCE(sat） VBE(sat) BVCBO BVCEO BVEBO f...
