Shantou Huashan Electronic Devices HC8050
NPN Epitaxial Silicon Transistor
| Part No. | HC8050 |
|---|---|
| Datasheet | HC8050 Download |
| Manufacturer |  Shantou Huashan Electronic Devices |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
（Ta=25℃） T stg —— Storage Temperature ………………………… -55~150 ℃ Tj——Juncttion Temperature …………………………………150℃ P C —— Collector Dissipation ………………………………… 1W VCBO——Collector-Base Voltage ………………………………40V VCEO——Collector-Emitter Voltage……………………………25V V EB O —— Emitter-Base Voltage ……………………………… 6V I C —— Collector Current ……………………………………… 1.5A 1―Emitter，E 2―Collector， C 3―Base，B TO-92 █ELECTRICAL CHARACTERISTICS
（Ta=25℃） Symbol Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base- Emitter Voltage Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Current Gain-Bandwidth Product Min Typ Max Unit Test Conditions ICBO IEBO HFE VBE VCE(sat） VBE(sat) BVCBO BVCEO BVEBO fT 85 40 0.1 0.1 500 1 0.5 1.2 μA μA 40 25 6 100 V V V V V V MHz VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=1V, IC=10mA IC=800mA, IB=80mA IC=...