• Part: H9013
  • Description: NPN Silicon Transistor
  • Category: Transistor
  • Manufacturer: Shantou Huashan Electronic
  • Size: 183.82 KB
Download H9013 Datasheet PDF
Shantou Huashan Electronic
H9013
N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. - 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) T stg - - Storage Temperature ………………………… -55~150 ℃ T j - - Junction Temperature ………………………………… 150 ℃ PC- - Collector Dissipation…………………………………625m W VCBO- - Collector-Base Voltage ………………………………40V VCEO- - Collector-Emitter Voltage……………………………20V V EB O - - Emitter-Base Voltage ……………………………… 5V I C - - Collector Current …………………………………… 500m A TO-92 1―Emitter,E 2―Base,B 3―Collector, C - ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Collector Cut-off Current Min Typ Max Unit Test Conditions ICBO IEBO HFE(1) HFE(2) VCE(sat) VBE(sat) VBE(ON) BVCBO BVCEO BVEBO 100 100 78 40 246 600 1.2 600 40 20 5 730 n A n A VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=50m A Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Bas...