HFP740 Description
This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast.
HFP740 Key Features
- 10A, 400V, RDS(on) <0.55Ω@VGS = 10 V
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Equivalent Type:IRF740
- Maximum Ratings（Ta=25℃ unless otherwise specified）
- Thermal Characteristics
- Electrical Characteristics（Ta=25℃ unless otherwise specified）
- Body Leakage 2.0 9.6 1800 195 45 50 170
- On Delay Time Rise Time Turn