1. High speed response (response frequency : 40MHz) 2. Peak emission wavelength λ p : TYP. 880 mm 3. Half intensity angle ∆θ : ± 22˚ 4. Lead bending type may be used. High Speed Infrared Emitting Diode
s Outline Dimensions
(Unit : mm)
2-C0.5
3.0 1.5 4.0
1.15
Transparent epoxy resin
R-1.25
(1.7)
1. AV equipment 2. Personal computers 3. Portable information terminal equipment
1
(2.54)
0.45
17.5
s.
GL4910- Side View Type Infrared Emitting Diode for Camera AF (Automatic Focusing)
GL4100- Side View and Thin Flat Type Infrared Emitting Diode
GL450- BIDIRECTIONAL EMISSION TYPE INFRARED LIGHT EMITTING DIODE
GL451- BIDIRECTIONAL EMISSION TYPE INFRARED LIGHT EMITTING DIODE
GL452- BIDIRECTIONAL EMISSION TYPE INFRARED LIGHT EMITTING DIODE
GL453- Bidirectional Emission Type Infrared Emitting Diode
GL453- BIDIRECTIONAL EMISSION TYPE INFRARED LIGHT EMITTING DIODE
GL454- Bidirectional Emission Type Infrared Emitting Diode
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GL496
GL496
s Features
1. High speed response (response frequency : 40MHz) 2. Peak emission wavelength λ p : TYP. 880 mm 3. Half intensity angle ∆θ : ± 22˚ 4. Lead bending type may be used.
High Speed Infrared Emitting Diode
s Outline Dimensions
(Unit : mm)
2-C0.5
3.0 1.5 4.0
1.15
Transparent epoxy resin
R-1.25
(1.7)
1. AV equipment 2. Personal computers 3. Portable information terminal equipment
1
(2.54)
0.45
17.5
s Applications
1.4
0.4
2 MIN0.5 1.55 2.8
1
2
1 Anode 2 Cathode
s Absolute Maximum Ratings
Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Operating temperature Storage temperature *2 Soldering temperature
*1 Pulse width 100 µ s, Duty ratio=0.01 *2 For MAX. 5 seconds at the position of 1.