GP1S33 Datasheet | Sharp Corporation

Features 1. Ultra-pact package 2. PWB mounting type 3. High sensing accuracy ( Slit width : 0.3mm ) 4. Applying to reflow soldering Preheat : 160˚C within 120 seconds Reflow : 200˚C within 60 seconds ( Peak : 240˚C ) Subminiature, Reflow Soldering Type Photointerrupter s Outline Dimensions ( Unit : mm ) Internal connection diagram 4 3 1 1 Anode 2 Collector 5.0 1.5 2.0 Center of light path 2 3 Emitter 4 Cathode (C0.8) 4.2 (0.3) Slit width s Applications 1. Floppy disk drives 2. Cameras 3.5 (1.0) + 4 - 0.15 - 0.2 0.1 (C0.3) 3.8 1.0± 0.5 4 - 0.5 Rest of gate g 2.5 - Tolerance :± 0.2mm - Burr's dimensions : 0.15MAX. - Rest of gate : 0.3MAX. - ( ) : Reference dimensions - The dimensions indicated by g refer to those measured from the lead base. 3 s Absolute Maximum Ratings Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature - 1 Soldering temperature Symbol IF VR P VCEO VECO IC PC P tot T opr T stg T sol ( Ta = 25˚C ) Rating 50 6 75 35 6 20 75 100 - 25 to + 85 - 40 to + 100 260 Unit m A V m W V V m A m W m W ˚C ˚C ˚C Input 5.2 Soldering area 0.5mm or more Output - 1 For 3 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GP1S33 s Electro-optical Chara Input Output Transfer characteristics Parameter Forward voltage Reverse current Collector dark current Collector current Collector-emitter saturation voltage Rise time Response time Fall time Symbol VF IR I CEO IC V CE(sat) tr tf Conditions I F = 20m A V R = 3V V CE = 20V V CE = 5V, I F = 5m A I F = 10m A, I C = 40 µ A V CE = 5V, I C = 100 µ A R L = 1 000 Ω MIN....