Datasheet4U Logo Datasheet4U.com

LH28F008SC-V - 8 M-bit (1 MB x 8) Smart 5

General Description

The LH28F008SC-V/SCH-V flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications.

Key Features

  • Absolute protection with VPP = GND.
  • Flexible block locking.
  • Block erase/byte write lockout during power transitions.
  • SRAM-compatible write interface.
  • High-density symmetrically-blocked architecture.
  • Sixteen 64 k-byte erasable blocks.
  • Enhanced cycling capability.
  • 100 000 block erase cycles.
  • 1.6 million block erase cycles/chip.
  • Low power management.
  • Deep power-down mode.
  • Automatic power sav.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LH28F008SC-V/SCH-V LH28F008SC-V/SCH-V DESCRIPTION The LH28F008SC-V/SCH-V flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications.