LH28F016SC-L
Overview
The LH28F016SC-L/SCH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards.
- SRAM-compatible write interface
- High-density symmetrically-blocked architecture - Thirty-two 64 k-byte erasable blocks
- Enhanced cycling capability - 100 000 block erase cycles - 3.2 million block erase cycles/chip
- Low power management - Deep power-down mode - Automatic power saving mode decreases ICC in static mode
- Automated byte write and block erase - Command user interface - Status register
- ETOXTM∗ V nonvolatile flash technology
- Packages - 40-pin TSOP Type I (TSOP040-P-1020) Normal bend/Reverse bend - 44-pin SOP (SOP044-P-0600) [LH28F016SC-L] - 48-ball CSP (FBGA048-P-0810) ∗ ETOX is a trademark of Intel Corporation. FEATURES
- SmartVoltage technology - 2.7 V (Read-only), 3.3 V or 5 V V
