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LH28F160S3HT-L10A - Flash Memory 16M (2MB bb 8/1MB bb 16)

Key Features

  • - Absolute Protection with VpP=GND - Flexible Block Locking - Erase/Write Lockout during Power Transitions n High Speed Write Performance - 32 Bytes x 2 plane Page Buffer - 2.7 @Byte Write Transfer Rate n High Speed Read Performance - 1OOns(3.3V.
  • O.3V), 120ns(2.71-3.6V) I Operating Temperature - -40°C to +85X n Extended Cycling Capability - 100,000 Block Erase Cycles - 3.2 Million Block Erase Cycles/Chip n Low Power Management - Deep Power-Down Mode - Automatic Power Savings Mode Decreases.

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Other Datasheets by Sharp Corporation

Part Number Description
LH28F160S3-L10 16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY
LH28F160S3NS-L10 Flash Memory 16M (2MB bb 8/1MB bb 16)
LH28F160S3T-L10A Flash Memory 16M (2MB bb 8/1MB bb 16)
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LH28F160S5-L70 16-MBIT(2MBx8/MBx16)Smart 5 Flash MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRODUCT SPECIFICATIONS ® Integrated Circuits Group LH28F160S3HT-L10A 16M (2MB × 8/1MB × 16) (Model No.: LHF16KA7) Flash Memory Spec No.: EL127111A Issue Date: August 29, 2000 SHARP .LHF16KA7 - l Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. l When using the products covered herein, please observe the conditions written herein and the precautions outlined in the following paragraphs. In no event shall the company be liable for any damages resulting from failure to strictly adhere to these conditions and precautions. (1) The products covered herein are designed and manufactured for the following application areas.