LH28F160S5H-L Description
The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible ponent suitable for resident flash...
LH28F160S5H-L Key Features
- Absolute protection with VPP = GND
- Flexible block locking
- Erase/write lockout during power transitions
- SRAM-patible write interface
- User-configurable x8 or x16 operation
- High-density symmetrically-blocked architecture
- Thirty-two 64 k-byte erasable blocks
- Enhanced cycling capability
- 100 000 block erase cycles
- 3.2 million block erase cycles/chip