Description
The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations.
Features
- Absolute protection with VPP = GND.
- Flexible block locking.
- Erase/write lockout during power transitions.
- SRAM-compatible write interface.
- User-configurable x8 or x16 operation.
- High-density symmetrically-blocked architecture.
- Thirty-two 64 k-byte erasable blocks.
- Enhanced cycling capability.
- 100 000 block erase cycles.
- 3.2 million block erase cycles/chip.
- Low power management.
- Deep power.
LH28F160S5H-L Datasheet
