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LH28F160S5H-L - 16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)

General Description

The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations.

Key Features

  • Absolute protection with VPP = GND.
  • Flexible block locking.
  • Erase/write lockout during power transitions.
  • SRAM-compatible write interface.
  • User-configurable x8 or x16 operation.
  • High-density symmetrically-blocked architecture.
  • Thirty-two 64 k-byte erasable blocks.
  • Enhanced cycling capability.
  • 100 000 block erase cycles.
  • 3.2 million block erase cycles/chip.
  • Low power management.
  • Deep power.

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Other Datasheets by Sharp Corporation

Part Number Description
LH28F160S5HT-L70 Flash Memory 16M (2MB bb 8/1MB bb 16)
LH28F160S5-L10 16-MBIT(2MBx8/MBx16)Smart 5 Flash MEMORY
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Full PDF Text Transcription (Reference)

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LH28F160S5-L/S5H-L LH28F160S5-L/S5H-L DESCRIPTION The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications.