LH28F320S3TD-L10 Description
The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations. Its symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible ponent suitable for resident...
LH28F320S3TD-L10 Key Features
- Absolute protection with VPP = GND
- Flexible block locking
- Erase/write lockout during power transitions
- SRAM-patible write interface
- User-configurable x8 or x16 operation
- High-density symmetrically-blocked architecture
- Sixty-four 64 k-byte erasable blocks
- Enhanced cycling capability
- 100 000 block erase cycles
- 3.2 million block erase cycles/bank