Datasheet Details
| Part number | LH28F320S3TD-L10 |
|---|---|
| Manufacturer | Sharp Corporation |
| File Size | 291.40 KB |
| Description | 32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank) Smart 3 Dual Work Flash Memory |
| Datasheet |
 LH28F320S3TD-L10 Datasheet
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General Description
The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations.
Key Features
- Absolute protection with VPP = GND.
- Flexible block locking.
- Erase/write lockout during power transitions.
- SRAM-compatible write interface.
- User-configurable x8 or x16 operation.
- High-density symmetrically-blocked architecture.
- Sixty-four 64 k-byte erasable blocks.
- Enhanced cycling capability.
- 100 000 block erase cycles.
- 3.2 million block erase cycles/bank.
- Low power management.
- Deep power.