LH28F800SGH-L Datasheet | Sharp Corporation

DESCRIPTION The LH28F800SG-L/SGH-L flash memories with Smart Voltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800SG-L/SGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes longer battery life and suits for cellular phone application. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible ponent suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F800SG-L/SGH-L offer three levels of protection : absolute protection with VPP at GND, selective hardware block locking, or flexible software block locking.These alternatives give designers ultimate control of their code security needs. 8 M-bit (512 k B x 16) Smart Voltage Flash Memories FEATURES - Smart Voltage technology - 2.7 V, 3.3 V or 5 V VCC - 2.7 V, 3.3 V, 5 V or 12 V VPP - High performance read access time LH28F800SG-L70/SGH-L70 - 70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)/ 85 ns (3.3±0.3 V)/100 ns (2.7 to 3.0 V) LH28F800SG-L10/SGH-L10 - 100 ns (5.0±0.5 V)/100 ns (3.3±0.3 V)/ 120 ns (2.7 to 3.0 V) - Enhanced automated suspend options - Word write suspend to read - Block erase suspend to word write - Block erase suspend to read - Enhanced data protection features - Absolute protection with VPP = GND - Flexible block locking - Block erase/word write lockout during power transitions - SRAM-patible write interface - High-density symmetrically-blocked architecture - Sixteen 32 k-word erasable blocks - Enhanced cycling capability - 100 000 block erase cycles - 1.6 million block erase cycles/chip - Low power management - Deep power-down mode - Automatic power saving mode decreases ICC in static...