LH28F800SU Datasheet PDF (8M (512K bb 16/ 1M bb 8) Flash Memory) | Download Sharp Electrionic Components LH28F800SU

LH28F800SU - 8M (512K bb 16/ 1M bb 8) Flash Memory

Description

The LH28F800SU is a high performance 8M (8,388,608 bit) block erasable non-volatile random access memory organized as either 512K × 16 or 1M × 8.

The LH28F800SU includes sixteen 64K (65,536) blocks or sixteen 32-KW (32,768) blocks.

A chip memory map is shown in Figure 3.

Features

8M (512K × 16, 1M × 8) Flash Memory 56-PIN TSOP TOP VIEW.
User-Configurable x8 or x16 Operation.
User-Selectable 3.3 V or 5 V VCC.
5 V Write/Erase Operations (5 V VPP).
No Requirement for DC/DC Converter to Write/Erase WP WE OE RY/BY DQ15 DQ7 DQ14 DQ6 GND DQ13 DQ5 DQ12 DQ4 VCC GND DQ11 DQ3 DQ10 DQ2 VCC DQ9 DQ1 DQ8 DQ0 A0 BYTE NC NC 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17.

Datasheet Details

Part number	LH28F800SU
Manufacturer	Sharp Electrionic Components
File Size	328.38 KB
Description	8M (512K bb 16/ 1M bb 8) Flash Memory
Datasheet	LH28F800SU Datasheet
Additional preview pages of the LH28F800SU datasheet.

📁 Similar Datasheet

LH28F800BJB-PTTL10 - 8M (x8/x16) Flash Memory (Sharp Electrionic)

LH28F800BJB-PTTL90 - 8M (x8/x16) Flash Memory (Sharp Electrionic)

LH28F800BJE-PBTL70 - 8M (x8/x16) Flash Memory (Sharp Electrionic)

LH28F800BJE-PBTL90 - 8M (x8/x16) Flash Memory (Sharp Electrionic)

LH28F800BJE-PTTL90 - Flash Memory 8M (Sharp Electrionic)

LH28F800BJE-PTTLZ1 - 8M (x8/x16) Flash Memory (Sharp Electrionic)

LH28F800BJHB-43 - 8M (x8/x16) Flash Memory (Sharp Electrionic)

LH28F800BJHB-PTTL90 - 8M (x8/x16) Flash Memory (Sharp Electrionic)

LH28F800BJHE-PBTL90 - 8M (x8/x16) Flash Memory (Sharp Electrionic)

LH28F800BJHE-PBTLT9 - Flash Memory 8Mbit (1Mbitx8) (Sharp Microelectronics)

Full PDF Text Transcription

Click to expand full text

LH28F800SU FEATURES 8M (512K × 16, 1M × 8) Flash Memory 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V VCC • 5 V Write/Erase Operations (5 V VPP) – No Requirement for DC/DC Converter to Write/Erase WP WE OE RY/BY DQ15 DQ7 DQ14 DQ6 GND DQ13 DQ5 DQ12 DQ4 VCC GND DQ11 DQ3 DQ10 DQ2 VCC DQ9 DQ1 DQ8 DQ0 A0 BYTE NC NC 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 3/5 CE1 NC NC A19 A18 A17 A16 VCC A15 A14 A13 A12 CE0 VPP RP A11 A10 A9 A8 GND A7 A6 A5 A4 A3 A2 A1 • 70 ns Maximum Access Time • Minimum 2.7 V Read capability – 160 ns Maximum Access Time (VCC = 2.7 V) • • • • 16 Independently Lockable Blocks 0.

Published: Mar 22, 2005 |