Datasheet4U Logo Datasheet4U.com

LH5164AVH - CMOS 64K (8K x 8) Static RAM

General Description

The LH5164AVH is a static RAM organized as 8,192 × 8 bits.

It is fabricated using silicon-gate CMOS process technology.

Key Features

  • 8,192 × 8 bit organization.
  • Access time: 200 ns (MAX. ).
  • Supply current (MAX. ): Operating: 90 mW 29 mW (tRC, tWC = 1 µs) Standby: 3.6 µW (MAX. ) @ 70°C 10.8 µW (MAX. ) @ 85°C Data retention: 0.6 µW (VCC = 3 V, tA = 25°C).
  • Low voltage operation: 3.3 V ±0.3 V.
  • Fully-static operation.
  • TTL compatible I/O.
  • Three-state outputs.
  • Packages: 28-pin, 450-mil SOP 28-pin, 8 × 13 mm2 TSOP (Type I).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
LH5164A-10LF 64K Static RAM Sharp
LH5160HN-10L 64K-Bit SRAM Sharp
LH5168 CMOS 64K Static RAM Sharp
LH5168V2 CMOS 64K Static RAM Sharp
LH5116NA-10 16K CMOS STATIC RAM Sharp Electrionic

Other Datasheets by Sharp Corporation

Part Number Description
LH5164AV CMOS 64K (8K x 8) Static RAM
LH5164A CMOS 64K (8K x 8) Static RAM
LH5164AH CMOS 64K (8K x 8) Static RAM
LH5164ASH CMOS 64K (8K x 8) Static RAM
LH5164AZ8 CMOS 64K (8K x 8) Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LH5164AVH FEATURES • 8,192 × 8 bit organization • Access time: 200 ns (MAX.) • Supply current (MAX.): Operating: 90 mW 29 mW (tRC, tWC = 1 µs) Standby: 3.6 µW (MAX.) @ 70°C 10.8 µW (MAX.) @ 85°C Data retention: 0.6 µW (VCC = 3 V, tA = 25°C) • Low voltage operation: 3.3 V ±0.3 V • Fully-static operation • TTL compatible I/O • Three-state outputs • Packages: 28-pin, 450-mil SOP 28-pin, 8 × 13 mm2 TSOP (Type I) DESCRIPTION The LH5164AVH is a static RAM organized as 8,192 × 8 bits. It is fabricated using silicon-gate CMOS process technology.