LH534B00 Datasheet PDF - Sharp Electrionic Components CMOS 4M (512K x 8) MROM Specs

LH534B00 - CMOS 4M (512K x 8) MROM

Datasheet Summary

Description

The LH534B00 is a 4M-bit mask-programmable ROM organized as 524,288 × 8 bits.

It is fabricated using silicon-gate CMOS process technology.

Features

524,288 words × 8 bit organization.
Access time: 120 ns (MAX. ).
Power consumption: Operating: 330 mW (MAX. ) Standby: 550 µW (MAX. ).
Static operation.
TTL compatible I/O.
Three-state outputs.
Single +5 V power supply.
Package: 40-pin, 10 × 20 mm2 TSOP (Type I).

Datasheet Details

Part number	LH534B00
Manufacturer	Sharp Electrionic Components
File Size	42.31 KB
Description	CMOS 4M (512K x 8) MROM
Datasheet	LH534B00 Datasheet
Additional preview pages of the LH534B00 datasheet.

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Full PDF Text Transcription

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LH534B00 FEATURES • 524,288 words × 8 bit organization • Access time: 120 ns (MAX.) • Power consumption: Operating: 330 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Package: 40-pin, 10 × 20 mm2 TSOP (Type I) DESCRIPTION The LH534B00 is a 4M-bit mask-programmable ROM organized as 524,288 × 8 bits. It is fabricated using silicon-gate CMOS process technology. A16 A15 A14 A13 A12 A11 A9 A8 NC NC NC NC A18 A7 A6 A5 A4 A3 A2 A1 CMOS 4M (512K × 8) MROM PIN CONNECTIONS 40-PIN TSOP (Type I) TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A17 GND NC NC A10 D7 D6 D5 D4 VCC VCC NC D3 D2 D1 D0 OE GND CE A0 534B00-1 Figure 1.

Published: Mar 22, 2005 |