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LH53B16R00 - CMOS 16M (1M x 16/512K x 32) MROM

Datasheet Summary

Description

The LH53B16R00 is a 16M-bit CMOS mask ROM (mask-programmable-read-only memory) organized as 1,048,576 × 16 bits (Word mode) or 524,288 × 32 bits (Double Word mode).

It is fabricated using silicon-gate CMOS process technology.

Features

  • 1,048,576 × 16 bit organization (Word mode: W = VIL) 524,288 × 32 bit organization (Double Word mode: W = VIH).
  • Access time: 120 ns (MAX. ) Access time in page mode: 50 ns (MAX. ).
  • Supply current:.
  • Operating: 180 mA (MAX. ).
  • Standby: 300 µA (MAX. ).
  • TTL compatible I/O.
  • Three-state outputs.
  • Single +5 V power supply.
  • Static operation.
  • Package: 70-pin, 500-mil SSOP.
  • Others:.
  • Non programmable.

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Datasheet Details

Part number LH53B16R00
Manufacturer Sharp Electrionic Components
File Size 57.49 KB
Description CMOS 16M (1M x 16/512K x 32) MROM
Datasheet download datasheet LH53B16R00 Datasheet
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LH53B16R00 FEATURES • 1,048,576 × 16 bit organization (Word mode: W = VIL) 524,288 × 32 bit organization (Double Word mode: W = VIH) • Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.) • Supply current: – Operating: 180 mA (MAX.) – Standby: 300 µA (MAX.) • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Static operation • Package: 70-pin, 500-mil SSOP • Others: – Non programmable – Not designed or rated as radiation – hardened – CMOS process (P type silicon substrate) DESCRIPTION The LH53B16R00 is a 16M-bit CMOS mask ROM (mask-programmable-read-only memory) organized as 1,048,576 × 16 bits (Word mode) or 524,288 × 32 bits (Double Word mode). It is fabricated using silicon-gate CMOS process technology.
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