LH5PV16256 Datasheet PDF - Sharp Electrionic Components CMOS 4M (256K x 16) Pseudo-Static RAM Specs

LH5PV16256 - CMOS 4M (256K x 16) Pseudo-Static RAM

Datasheet Summary

Description

The LH5PV16256 is a 4M bit Pseudo-Static RAM with a 262,144 words × 16 bit organization.

Features

262,144 words × 16 bit organization.
Power supply: +3.0 ± 0.15 V.
Access time: 120 ns (MAX. ).
Cycle time: 190 ns (MIN. ).
Power consumption (MAX. ): 126 mW (Operating) 94.5 µW (Standby = CMOS input level) 220.5 µW (Self-refresh = CMOS input level).
LVTTL compatible I/O.
Available for address refresh, auto-refresh, and self-refresh modes.
2,048 refresh cycles/32 ms.
Address non-multiple.
Available for byte wr.

Datasheet Details

Part number	LH5PV16256
Manufacturer	Sharp Electrionic Components
File Size	116.18 KB
Description	CMOS 4M (256K x 16) Pseudo-Static RAM
Datasheet	LH5PV16256 Datasheet
Additional preview pages of the LH5PV16256 datasheet.

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Full PDF Text Transcription

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LH5PV16256 FEATURES • 262,144 words × 16 bit organization • Power supply: +3.0 ± 0.15 V • Access time: 120 ns (MAX.) • Cycle time: 190 ns (MIN.) • Power consumption (MAX.): 126 mW (Operating) 94.5 µW (Standby = CMOS input level) 220.5 µW (Self-refresh = CMOS input level) • LVTTL compatible I/O • Available for address refresh, auto-refresh, and self-refresh modes • 2,048 refresh cycles/32 ms • Address non-multiple • Available for byte write mode using UWE and LWE pins • Package: 44-pin, TSOP (Type II) • Process: Silicon-gate CMOS • Operating temperature: 0 - 70°C • Not designed or rated as radiation hardened CMOS 4M (256K × 16) Pseudo-Static RAM DESCRIPTION The LH5PV16256 is a 4M bit Pseudo-Static RAM with a 262,144 words × 16 bit organization.

Published: Mar 22, 2005 |