LH5PV8512 Datasheet PDF - Sharp Electrionic Components CMOS 4M (512K x 8) Pseudo-Static RAM Specs

LH5PV8512 - CMOS 4M (512K x 8) Pseudo-Static RAM

Datasheet Summary

Description

The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word × 8 bit organization.

It is fabricated using silicon-gate CMOS process technology.

Features

524,288 words × 8 bit organization.
CE access time (tCEA): 120 ns (MAX. ).
Cycle time (tRC): 190 ns (MIN. ).
Power supply: +3.0 V ± 0.15 V (Operating) +2.2 V to +3.15 V (Data retention).
Power consumption (MAX. ): 126 mW (Operating) 95 µW (Standby = CMOS input level) 221 µW (Self-refresh = CMOS input level).
Available for address refresh, auto-refresh, and self-refresh modes.
2,048 refresh cycles/32 ms.
Address non-multiple.

Datasheet Details

Part number	LH5PV8512
Manufacturer	Sharp Electrionic Components
File Size	90.73 KB
Description	CMOS 4M (512K x 8) Pseudo-Static RAM
Datasheet	LH5PV8512 Datasheet
Additional preview pages of the LH5PV8512 datasheet.

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Full PDF Text Transcription

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LH5PV8512 FEATURES • 524,288 words × 8 bit organization • CE access time (tCEA): 120 ns (MAX.) • Cycle time (tRC): 190 ns (MIN.) • Power supply: +3.0 V ± 0.15 V (Operating) +2.2 V to +3.15 V (Data retention) • Power consumption (MAX.): 126 mW (Operating) 95 µW (Standby = CMOS input level) 221 µW (Self-refresh = CMOS input level) • Available for address refresh, auto-refresh, and self-refresh modes • 2,048 refresh cycles/32 ms • Address non-multiple • Not designed or rated as radiation hardened • Package: 32-pin, 525-mil SOP • Package material: Plastic • Substrate material: P-type silicon • Process: Silicon-gate CMOS • Operating temperature: 0 - 70°C CMOS 4M (512K × 8) Pseudo-Static RAM DESCRIPTION The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word × 8 bit organization.

Published: Mar 22, 2005 |