LH5PV8512
Description
The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word × 8 bit organization. It is fabricated using silicon-gate CMOS process technology.
Key Features
- 524,288 words × 8 bit organization
- CE access time (tCEA): 120 ns (MAX.)
- Cycle time (tRC): 190 ns (MIN.)
- Power supply: +3.0 V ± 0.15 V (Operating) +2.2 V to +3.15 V (Data retention)
- Power consumption (MAX.): 126 mW (Operating) 95 µW (Standby = CMOS input level) 221 µW (Self-refresh = CMOS input level)
- Available for address refresh, auto-refresh, and self-refresh modes
- 2,048 refresh cycles/32 ms
- Address non-multiple
- Not designed or rated as radiation hardened
- Package: 32-pin, 525-mil SOP
