Datasheet Summary
FUNCTION
- 262,144 words × 4 bit
- Access time: 100 ns (MAX)
- Cycle time: 190 ns (MIN)
- Fast page mode cycle time: 60 ns (MIN)
- Power supply: +3.3 V ±0.3 V
- Power consumption (MAX): Operating: 126 mW Standby: 0.54 mW
- Built-in latch circuit for row-address, column-address, and input data
- OE = Don’t care in early write operation
- RAS only refresh, hidden refresh, and CAS before RAS refresh capability
- On-chip refresh counter
- 512 refresh cycle/8 ms
- Packages: 20-pin, 300-mil DIP 26-pin, 300-mil SOJ 28-pin, 8 × 13 mm2 TSOP (Type I)
CMOS 1M (256K × 4) Dynamic RAM
DESCRIPTION
The LH6V4256 is a 262,144 word × 4-bit dynamic RAM which allows fast page mode access. The...