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GH16P32B8C Datasheet PDF

Sharp GH16P32B8C

Red Laser Diode

Part No. GH16P32B8C
Datasheet GH16P32B8C Download
Manufacturer
Sharp
Description Red Laser Diode
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GH16P32B8C datasheet page 1 preview
GH16P32B8C Single-mode Red Laser Diode
● Characteristics Item Wavelength (Peak) Output [Max] Threshold current Operating current Operating voltage Far Field (FWHM) Terminal connections Conditions Po=90mW - - Po=90mW Po=90mW Po=90mW (Tc=25℃, CW) Characteristic value (TYP.) 661nm 90mW [100mW] 42mA 120mA 2.3V θ// 9.3° , θ⊥ 15° No.6 t1.8
● CW I-L,I-V Temperature I-L 100 25℃ 75 40℃ 60℃ 50 70℃ Po (mW) 25 0 0 50 100 Iop (mA) To the Wavelength To the Package t1.8mm Frame Package March 2023 I-V 3 2 Vop (V) 25℃ 1 40℃ 60℃ 70℃ 0 150 0 50 100 150 Iop (mA)
● Far Field Pattern 1.2 1.0 Intensity (a.u.) 0.8 0.6 0.4 0.2 0 -60 -40 -20 0 20 Angle (°) θ∥ θ⊥ 40 60
● Near Field Pattern Y Vertical Parallel Emitter size X Y FWHM (μm) 2.0 0.8 X 1/e2 (μm) 3.2 1.3 When using the products described in this document, please be sure to order the latest specifications and check the contents. Intensity (a.u.) Intensity (a.u.) X Profile 1.2 1.0 0.8 0.6 0.4 0.2 0 -3 -2 -1 0 1 2 3 Length (um) Y Profile 1.2 1.0 0.8 0.6 0.4 0.2 0 -3 -2 -1 0 1 2 3 Length (um) Sharp Fukuyama Laser Co., Ltd.