GL4800 Datasheet PDF

FEATURES

1. Thin type ( Thickness : 1.5mm ) 2. Beam angle ( ∆θ : TYP. ± 30˚ ) 3. Radiant flux ( Φ e : MIN. 0.7mW at I F = 20mA ) 4. Epoxy resin package Thin Type Infrared Emitting Diode s Outline Dimensions Rest of gate 0.3 MAX. 3.0 ± 0.2 1.6 1.0 2 - C0.5 0.8 ( Unit : mm ) 1.5 ± 0.2 0.8 Pink transparent epoxy resin Protruded resin 1.7 φ 0.8 3.5 ± 0.2 0.7 s

APPLICATIONS

1. Floppy disk drives 2. Optoelectronic switches MIN.0.5 17.5 ± 0.5 2 - 0.9 1.8 2 - 0.45 0.8 1 2 1 Anode 2 Cathode 2.54 0.25 1 2 s

ABSOLUTE MAXIMUM RATINGS

Parameter Power dissipation Forward current *1 Peak forward current Reverse voltage Operating temperature Storage temperature *2 Soldering temperature Symbol P IF I FM VR T opr T stg T sol Rating 75 50 1 6 - 25 to + 85 - 40 to + 85 260 ( Ta = 25˚C ) Unit mW mA A V ˚C ˚C ˚C *1 Pulse width<=100 µ s, Duty ratio= 0.01 *2 For 3 seconds at the position of 1.8mm from the surface of resin edge. s Electro-optical Characteristics Parameter Forward voltage Peak forward voltage R...