Sharp GL710
Infrared Emitting Diode
APPLICATIONS
: OA equipment Audio visual equipment Home appliances Telecommunication equipment (terminal) Measuring equipment Tooling machines Computers IrDA Components Group GL710 Infrared Emitting DiodeABSOLUTE MAXIMUM RATINGS
PARAMETER Supply voltage Forward current Peak forward current Operating temperature Storage temperature Soldering temperature SYMBOL VCC IF IFM TOPR TSTG TSOL RATINGS 0 to 6.0 50 400 -10 to + 70 -20 to +85 230 UNIT NOTE V mA mA °C °C °C 2 1 NOTES: 1. Pulse width 90 µs, duty ratio 0.25 2. For 3 s MAX. at the position of 1.6 mm from the resin edge. ELECTRO-OPTICAL CHARACTERISTICS TA = 25°C PARAMETER Peak forward voltage Reverse current Radiant intensity Peak emission wavelength Spectrum radiation bandwidth Half intensity angle Rise time Fall time SYMBOL VFM IR IE λp ∆λ ∆θ tr tf MIN. TYP. 1.9 MAX. 10 UNIT V µA mW/sr nm nm degrees ns ns CONDITIONS IFM = 0.3 A VR = 3 V IFM = 0.3 A, φ ≤ 15° IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA NOTE 100 850 (140) 880 40 ±20 15 15 (300) 900 1 NOTE: 1.