Sharp LH28F004SU-LC
the LH28F004SU-LC is also the ideal choice for designing embedded mass storage flash memory systems. The LH28F004SU-LC’s independently lockable 32 symmectrical blockeFEATURES
40-PIN TSOP 4M (512K × 8) Flash Memory TOP VIEW● 512K × 8 Word Configuration
● 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC) – No Requirement for DC/DC Converter to Write/Erase A16 A15 A14 A13 A12 A11 A9 A8 WE RP VPP RY/BY A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A17 GND NC NC A10 DQ7 DQ6 DQ5 DQ4 VCC VCC NC DQ3 DQ2 DQ1 DQ0 OE GND CE A0
● 120 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V)
● Min. 2.7 V Read Capability – 160 ns Maximum Access Time (VCC = 2.7 V)
● 32 Independently Lockable Blocks
● 100,000 Erase Cycles per Block
● Automated Byte Write/Block Erase – Command User Inferface – Status Register – RY / » BY » Status Output
● System Performance Enhancement – Erase Suspend for Read – Two-Byte Write – Full Chip Erase 28F004SUT-LC12-1
● Data Protection – Hardware Erase/Write Lockout during Power Transitions – Software Erase/Write Lockout Figure 1. TSOP Configuration
● Independently...