Sharp LH28F004SU-Z1
the LH28F004SU-Z1 is also the ideal choice for designing embedded mass storage flash memory systems. The LH28F004SU-Z1 is a very high density, highest performance non-volatile read/write solution for solidstate storage applications. Its independently lockable 32 symmetrical blocked architecture (16K each) extended cycling, low power operation, very fast write and read performance and selective block locking provide a highly flexible memory component suitable for high density memory cards, Resident Flash Arrays and PCMCIA-ATA Flash Drives.| Part No. | LH28F004SU-Z1 |
|---|---|
| Datasheet | LH28F004SU-Z1 Download |
| Manufacturer |  Sharp |
| Description | 4M (512K bb 8) Flash Memory |
| Buy | Stock & Price |
FEATURES
40-PIN TSOP 4M (512K × 8) Flash Memory TOP VIEW● 512K × 8 Word Configuration
● 5 V Write/Erase Operation (5 V VPP) – No Requirement for DC/DC Converter to Write/Erase A16 A15 A14 A13 A12 A11 A9 A8 WE RP VPP RY/BY A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A17 GND NC NC A10 DQ7 DQ6 DQ5 DQ4 VCC VCC NC DQ3 DQ2 DQ1 DQ0 OE GND CE A0
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● 100 ns Maximum Access Time 32 Independently Lockable Blocks (16K) 100,000 Erase Cycles per Block Automated Byte Write/Block Erase – Command User Interface – Status Register » BY » Status Output – RY / – Erase Suspend for Read – Two-Byte Write – Full Chip Erase
● System Performance Enhancement
● Data Protection – Hardware Erase/Write Lockout during Power Transitions – Software Erase/Write Lockout
● Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset) 28F004SUT-Z1-1 Figure 1. TSOP Configuration
● 5 µA (Typ.) ICC in CMOS...
