Sharp LH28F016SU
the LH28F016SU is also the ideal choice for designing embedded mass storage memory systems. The LH28F016SU is a very high density, highest performance non-volatile read/write solution for solid-state storage applications. Its symmetrically blocked architecture (100% compatible with the LH28F008SA 8M Flash memory), extended cycling, low power 3.3 V operation, very fast write and read performance and selective block locking provide a highly flexible memory component suitable for high density memory cards, Resident Flash Arrays and PCMCIA-ATA Flash Drives.| Part No. | LH28F016SU |
|---|---|
| Datasheet | LH28F016SU Download |
| Manufacturer |  Sharp |
| Description | 16M (1M bb 16/ 2M bb 8) Flash Memory |
| Buy | Stock & Price |
FEATURES
16M (1M × 16, 2M × 8) Flash Memory 56-PIN TSOP TOP VIEW●
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● User-Configurable x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 70 ns Maximum Access Time 0.32 MB/sec Write Transfer Rate 100,000 Erase Cycles per Block 32 Independently Lockable Blocks 5 V Write/Erase Operation (5 V VPP) – No Requirement for DC/DC Converter to Write/Erase – 160 ns Maximum Access Time (VCC = 2.7 V) 3/5 CE1 NC A20 A19 A18 A17 A16 VCC A15 A14 A13 A12 CE0 VPP RP A11 A10 A9 A8 GND A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 WP WE OE RY/BY DQ15 DQ7 DQ14 DQ6 GND DQ13 DQ5 DQ12 DQ4 VCC GND DQ11 DQ3 DQ10 DQ2 VCC DQ9 DQ1 DQ8 DQ0 A0 BYTE NC NC
● Minimum 2.7 V Read capability
● Revolutionary Architecture – Pipelined Command Execution – Write During Erase – Command Superset of Sharp LH28F008SA
● 5 µA (Typ.) ICC in CMOS Standby
● 1 µA (Typ.) Deep Power-Down
● State-of-the-Art 0.55 µm ETOX™ Flash Technology
● 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP (Type I) Package 28F016SUT-1 Figure 1.
