Sharp LH28F020SU-L
the LH28F020SU-L is also the ideal choice for designing embedded mass storage flash memory systems. The LH28F020SU-L is a very high density, highest performance non-volatile read/write solution for solidstate storage applications. Its independently lockable 16 symmetrical blocked architecture (16K each) extended cycling, low power operation, very fast write and read performance and selective block locking provide a highly flexible memory component suitable for high density memory cards, Resident Flash Arrays and PCMCIA-ATA Flash Drives.| Part No. | LH28F020SU-L |
|---|---|
| Datasheet | LH28F020SU-L Download |
| Manufacturer |  Sharp |
| Description | 2M (256K bb 8) Flash Memory |
| Buy | Stock & Price |
FEATURES
32-PIN TSOP 2M (256K × 8) Flash Memory TOP VIEW● 256K × 8 Bit Configuration
● 5 V Write/Erase (3.3 V VCC)
● Access Time – For 3.3 V Read: 150 ns A11 A9 A8 A13 A14 A17 WE VCC VPP A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 A3
● Minimum 2.7 V Read Capability – 180 ns Maximum Access Time (VCC = 2.7 V)
● 16 Independently Lockable Blocks (16K Blocks)
● 100,000 Erase Cycles per Block
● Automated Byte Write/Block Erase – Command User Interface – Status Register
● System Performance Enhancement – Erase Suspend for Read – Two-Byte Write – Full Chip Erase 28F020SUL15-1 Figure 1. TSOP Configuration 32-PIN SOP TOP VIEW
● Data Protection – Hardware Erase/Write Lockout during Power Transitions – Software Erase/Write Lockout VPP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC W...
