Sharp LH5PV8512
The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word × 8 bit organization. It is fabricated using silicon-gate CMOS process technology. The advantage is the cost saving realized with the lower cost PSRAM.| Part No. | LH5PV8512 |
|---|---|
| Datasheet | LH5PV8512 Download |
| Manufacturer |  Sharp |
| Description | CMOS 4M (512K x 8) Pseudo-Static RAM |
| Buy | Stock & Price |
FEATURES
● 524,288 words × 8 bit organization● CE access time (tCEA): 120 ns (MAX.)
● Cycle time (tRC): 190 ns (MIN.)
● Power supply: +3.0 V ± 0.15 V (Operating) +2.2 V to +3.15 V (Data retention)
● Power consumption (MAX.): 126 mW (Operating) 95 µW (Standby = CMOS input level) 221 µW (Self-refresh = CMOS input level)
● Available for address refresh, auto-refresh, and self-refresh modes
● 2,048 refresh cycles/32 ms
● Address non-multiple
● Not designed or rated as radiation hardened
● Package: 32-pin, 525-mil SOP
● Package material: Plastic
● Substrate material: P-type silicon
● Process: Silicon-gate CMOS
● Operating temperature: 0 - 70°C CMOS 4M (512K × 8) Pseudo-Static RAM
DESCRIPTION
A PSRAM uses on-chip refresh circuitry with a DRAM memory cell for pseudo-static operation which eliminates external clock inputs, while having the same pinout as industry standard SRAMs. Moreover, due to the functional similarities between PSRAMs and SRAMs, existing 512K × 8 SRAM sockets can be filled with the LH5PV8512N with little or no changes.
